| PART |
Description |
Maker |
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| 3SK300 |
Silicon N Channel MOS FET
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
| BF1205C |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| UPA603 UPA603T PA603T G11250EJ1V0DS00 UPA603T-A |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
P-CHANNEL MOS FET 6-PIN 2 CIRCUITS
|
NEC[NEC]
NEC Corp.
|
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
|
Vishay Telefunken
|
| 3SK298ZP-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-82, CMPAK-4
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| 3SK295ZQ-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-61AA, MPAK-4
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| TPCF8402 TPCF840209 |
Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| FC6943010R |
Dual N-channel MOS FET
|
Panasonic Semiconductor
|
| 2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491 |
From old datasheet system
P-channel MOS FET (-60V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| BF998WR |
N-channel dual-gate MOS-FET
|
Philips
|
| BF1109WR BF1109 BF1109R |
N-channel dual-gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
